资源描述
|75%75%reduction in silicon carbide 75%T-pak SiC 2018 Model 3 IGBT 75%5%Yole 2021 SiC 11 2027 63 CAGR 34%OBC DC/DC SiC 2027 50 EVTank 2026 3157 21-26 CAGR 37%800V SiC DC DC TrendForce 2025 6 SiC 169 21-25 CAGR 94%SiC Wolfspeed 95%41%SiC SiC SiC IDM MOCVD SiC/2023 03 09 021-63325888*8514 S0860514050005 BPT856 S0860522090002 2022-09-05 2 1.5 2.10 2.1.10 2.2 SiC.11 3.15 3.1.15 3.2 IDM.16 3.3.17 3.4 SiC MOCVD.17 3.5 SiC.18 3.6 SiC.20 4.21 WUFUyRmRpMoPpRoNmRtMmN8O9R9PsQpPpNmPlOqQnOeRmNqQ9PmMvMxNtRrQNZnNzR 3 1 75%.5 2.5 3 SiC.6 4 Model 3 SiC MOSFET.6 5 IGBT.6 6.7 7 LEAF 80kW.7 8 SiC MOSFET.7 9 SiC MOSFET.8 10.8 11 800V.9 12 SiC MOSFET.9 13 SiC&/.9 14 SiC 2020.10 15 SiC.11 16 SiC.11 17.12 18 6 SiC.12 19.12 20 SiC.12 21 SiC.13 22 SiC.13 23 SiC.13 24 800V.13 25 Wolfspeed SiC.14 26 480kW.14 27 SiC.15 28 2021 SiC.16 29 SiC.17 30 SiC.20 31.20 32.21 1.10 4 2 800V.14 3 94.6%.16 4.16 5 SiC SBD 1200V.17 6.18 7 SiC.18 8 SiC.19 9.19 5 1 75%3 1 2022 Model 3 30%50%75%75%reduction in silicon carbide 1000 75%SiC MOSFET SiC 1 75%2023 1 2 3-10 3 2 Si Ge GaAs GaN 4H-SiC 6H-SiC 3C-SiC ALN eV 1.12 0.67 1.43 3.37 3.26 3 2.2 6.2 MV/cm 0.3 0.1 0.06 5 3 5 3 1.4 cm2/Vs 1350 3900 8500 1250 800 400 800 300 cm2/Vs 480 1900 400 200 115 90 320 14 W/cm*K 1.3 0.58 0.55 2 4.9 4.9 3.6 2.85 6 2018 Model 3 Model 3 SiC Si-IGBT 75%5%2020 SiC MOSFET EV 200KW 3 SiC 4 Model 3 SiC MOSFET Yole 800V IGBT IGBT 5 IGBT 7 6 7 LEAF 80kW 75%SiC 1 SiC MOSFET SiC MOSFET SiC MOSFET 3 MOSFET 2 1/4 75%MOSFET SiC MOSFET 8 SiC MOSFET 8 9 SiC MOSFET 2 3-7 500 200 10 15 T-pak 5 10 3 800V Model 3 400V 650V SiC MOSFET 48 800V 1200V SiC MOSFET 9 11 800V 4 CASA SiC SiC SiC SiC 12 SiC MOSFET 13 SiC&/System Plus CASA 44%32%17%7%SiC 150mm+0204060801001201402018-2023 2023-2028 2028-2033 2033-2038 2038-2043 2043-2048 10 2 2.1 Wolfspeed SiC SiC Wolfspeed ST Wolfspeed SiC 95%SiC 41%14 SiC 2020 TrendBank Yole Wolfspeed SiC 22 SiC 4 2024 SiC 2017 10 SiC 10 SiC 1 22 SiC 4 2024 SiC 2017 10 SiC 10 2021 5 30 SiC 2022 5 1.5 SiC SiC SiC SiC 6 SiC 2-6 SiC SiC 2-6 SiC SiC 55 13 SiC 11 SiC 6 8 SiC 15 SiC 2.2 SiC SiC 2027 63 5G SiC Yole 2021 SiC 11 2027 63 CAGR 34%OBC DC/DC SiC 2027 50 21-27 CAGR 39%16 SiC Yole 12 SiC EVTank 2026 3157 21-26 CAGR 37%800V SiC TrendForce 2025 6 SiC 169 21-25 CAGR 94%17 18 6 SiC EVTank TrendForce SiC 2022 689 2026 50%DIGITIMES Research 2025 SiC 37%2021 25%SiC 19 20 SiC DIGITIMES Research SiC SiC DC DC OBC SiC SiC 85%SiC DC/DC 0%20%40%60%80%100%120%05001000150020002500300035002020 2021 2022 2023E 2024E 2025E 2026E yoy0%20%40%60%80%100%120%140%0501001502002020 2021E 2022E 2023E 2024E 2025E 6 SiC 0%20%40%60%80%100%120%140%160%180%020040060080010001200140016002020 2021 2022 2023E 2024E 2025E 2026E yoy0%10%20%30%40%50%2021 2025E 13 20%40%64%SiC 6%21 SiC 22 SiC Infineon SiC SiC IGBT IGBT SiC 800V SiC 800V 400V EMC 2019 Taycan 800V 350kw 15 80 800V 800V 2022 SiC 800V 23 SiC 24 800V 14 2 800V(km)Taycan 2018 800V 500 15min80%Ioniq 5 2020 800V 500 5min100km EV6 2020 800V 528 18min80%E 3.0 2021 800V-5min150km RS e-tron GT 2021 800V 470 20min80%480kW V Plus 2021 800V-5min200km G9 480kW 2021 800V-5min200km 2021 800V 802 10min800km S HI 2022 800V-10min200km Macan 2023 800V-Type123 2023 800V-20min80%EV 2023 800V-10min300km EV 2025 800V-Trinity 2026 800V-800V 800V OBC DC/DC 400V 800V SiC 800V 400V SiC MOSFET 22 Wolfspeed SiC 350 kW 20-30%2021 8 480kW 22Q4 480kW 5 200 25 Wolfspeed SiC 26 480kW Wolfspeed 15 3 SiC SiC(603290)IDM(003031)(688396)(600745)SiC MOCVD(688012)(600703)SiC(688234)3.1 SiC MOSFET 2021 SiC 2022 SiC MOSFET SiC MOSFET 800V SiC MOSFET 27 SiC SiC SiC SiC SiC MOSFET 5 SiC 3 6 6 SiC 6.6 1.8 SiC MOSFET SiC 16 28 2021 SiC SiC 5 3 5 6/6 6.6 1.76 31.8%26.6%3.2 IDM 94.6029%SiC IDM SiC 2.4 SiC 650V 1200V 1700V 3 94.6%/1 44.8258%2 15.9071%3 9.3263%4 8.3043%5 5.5594%6 5.5594%7 5.1206%94.6029%4/6 SiC GaN 1.2 12 4.8 6 SIC GaN 6 GaN 4G 5G 120 120 SiC 1200V-1700V 2.4 2.4 SiC SBD MOSFET 1200 1200 17 3.3 IDM SiC JBS SiC 3 2023 MOS 650V 1200V SiC JBS 21 SiC MOSFET 1200V/650V 29 SiC/SiC JBS 1 SiC 2 Vf Qc 3 4 SiC MOS 1 SiC 2 5cm cm 3 3.4 SiC MOCVD LED MEMS 1 65 14 7 5 2 MOCVD LED 2022 6 2654 73 5 SiC SBD 1200V/TO220-2L TO247-3L TO247-2L TO252-2L TO263-2L 2A CRXI02D120G2 CRXL02D120G2 3A CRXI03D120G2 CRXL03D120G2 5A CRXI05D120G2 CRXL05D120G2 CRXD05D120G2 10A CRXI10D120G2 CRXQ10D120G2 CRXU10D120G2 CRXL10D120G2 15A CRXI15D120G2 CRXU15D120G2 20A CRXI20D120G2 CRXQ20D120G2 CRXU20D120G2 CRXB20D120G2 CRXS20D120G2 30A CRXQ30D120G2 CRXU30D120G2 CRXB30D120G2 40A CRXQ40D120G2 CRXU40D120G2 18 6 CMOS MEMS 2.5D 3D MOCVD LED SiC 2022 SiC 25 37.56 7 SiC 25 10 2025 7 SiC CVD 2021.01-2025.12 CVD 25 001-17-CN 10 3.5 SiC SiC SiC SiC 1 SiC 2 SiC SiC 19 SiC 8 SiC SiC SiC HEMT SiC SiC SiC MOSFET IGBT 2015 4 SiC 2018 A B yole 2021 SiC 9 A SiC A 2018 A SiC 2018-20 A SiC 7 20 B SiC 2018-20 B SiC 148 1.4 SiC 2022 7 23 25 6 SiC 13.9 2021 25“SiC”6 SiC 2022Q3 2026 SiC 30/SiC 20 30 SiC 数据来源：天岳 先进招 股书、东方证 券 研究所 3.6 SiC IDM IoT IDM 60 2.5 1.5 800 31 数据来源：闻泰 科技公 司官网、东方 证 券研究所 SiC SiC 2021 8.37 MOSFET SiC GaN IGBT(GaN FET)AECQ GaN SiC SiC IGBT IC 21 32 数据来源：闻泰 科技公 司公告、东方 证 券研究所 4 SiC SiC SiC SiC SiC SiC SiC Tabl e_Disclai mer 12/15%5%15%-5%+5%-5%5%-5%+5%-5%HeadertTabl e_Discl ai mer HeadertTabl e_Address 318 26 021-63325888 021-63326786 Tabl e_Disclai mer 前沿报告库是中国新经济产业咨询报告共享平台。行业范围涵盖新一代信息技术、5G、物联网、新能源、新材料、新消费、大健康、大数据、智能制造等新兴领域。为企事业单位、科研院所、投融资机构等提供研究和决策参考。扫一扫免费获取海量报告
展开阅读全文